B. SOMANATHAN NAIR
Figure 1 shows the common-base (CB) configuration of
a PNP-type bipolar junction transistor with its emitter-base junction forward
biased (FB) and collector-base junction reverse biased (RB). It can be seen
that, under these biasing conditions, emitter current IE flows through the base to the collector. It can also be
seen that the emitter current gets divided as collector current IC and base current IB.
Since the base is very narrow, we find that IB
is much smaller than IC
and that IC is almost
equal to IE.
The operation of CB configuration can be studied
using Fig. 2, which shows a hydraulic model of the CB configuration. In this
model, we have a driving pump in the first pipe section and a suction pump in
the third pipe section. The driving pump is similar to the forward bias in the
emitter-base region and suction pump is similar to the reverse bias in the
collector-base region.
The driving pump drives current from the first pipe
section (equivalent to the emitter current IE
through the emitter) into the second and third pipe sections. A major portion
of this current (i.e., IE)
flows to the third pipe section (i.e., collector region) as collector current IC, which will be sucked away
by the suction pump (i.e., acting similar to the reverse bias between collector
and base). A small portion of the current (i.e., emitter current) flows through
the narrow middle pipe section (i.e., base region) as the base current IB. It can be seen that
IE = IC + IB
Now,
if IE varies, then IC varies in the same
fashion. Thus the changes in the input current are regenerated in the output
current as such and hence the CB configuration can act as an amplifier.
It can be seen that current flows through the
collector even if the suction pump is removed. This operation is similar to the
CB configuration with VCC
removed (Fig. 3). We thus find that IC
flows even when VCC= 0.
This is because even though VCC=
0 (by shorting the collector-base terminals), the path is completed for the
emitter-supply voltage VEE,
which will drive the emitter current through the collector. Thus we find that IC is almost equal to IE even when VCC = VCB = 0 (here we use the notation VCB to indicate the voltage between collector and base
terminals since in plotting characteristics, we use terminal voltages rather
than supply voltages). This is clearly indicated in the characteristic (Fig. 5).
Now, to make IC
= 0, we have to convert the suction pump (reverse bias) into a driving pump
(forward bias). Then collector current will flow from collector into base so
that IC = IE. Since the two currents
oppose each other, the net collector current will become zero. This is shown in
Fig. 4. Figure 5 shows one CB output characteristic.
In Fig. 5, we find that IC becomes zero at about VCB = 0.8 V. It may also be
noted that the curve for +VCB
resembles that of a forward-biased (C-B) diode. This condition is usually
called saturation. Thus, when both
the junctions are forward biased, we get the saturation condition of the transistor
amplifier. It may be noted that since VCC
(or VCB) = VEE (or VEB) for saturation condition, the net voltage VCEsat (VCB ‒ VEB)
= 0, ideally. However, since E-B junction is heavily doped and C-B junction is
lightly doped, usually VCEsat
= 0.1 to 0.2 V.
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